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Dina Triyoso

From Wikipedia, the free encyclopedia

Dina H. Triyoso is an American materials scientist, and an expert on high-κ dielectrics and their applications in semiconductor-based electronics, and more generally on materials and processes for electronic devices. She works for Tokyo Electron (TEL), in New York.[1]

Triyoso was a student of chemical engineering at Texas A&M University, where she received her Ph.D. in 2000,[2] advised by Cellular engineer Theresa Good.[3] She worked for Motorola Semiconductor Products and its spin-off Freescale Semiconductor,[2] and then for GlobalFoundries, before taking her present position at Tokyo Electron in 2019.[4]

She was named to the 2025 class of IEEE Fellows "for contributions to high-k metal gate complementary metal-oxide-semiconductor technology".[1]

References

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  1. ^ a b IEEE Fellow Class of 2025 (PDF), IEEE, retrieved 2024-12-23
  2. ^ a b "Dina Triyoso", IEEE Xplore, IEEE, November 27, 2007, retrieved 2024-12-23
  3. ^ Theresa Good, University of Maryland Baltimore County, retrieved 2024-12-23; includes listing of former students
  4. ^ Speaker biography: Material Innovation in the Atomic Scale Era – An Industry Perspective, National University of Singapore College of Design & Engineering, September 23, 2024, retrieved 2024-12-23
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