File:Silicon dislocation orientation 111 mag 500x.png
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Summary
| Description |
Title: Dislocations in Si crystal, orientation 111
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| Date | 13 September 2005 (original upload date) |
| Source | No machine-readable source provided. Own work assumed (based on copyright claims). |
| Author | No machine-readable author provided. Twisp assumed (based on copyright claims). |
Licensing
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I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 00:15, 13 September 2005 | | 768 × 576 (650 KB) | Twisp | * Title: Dislocations in Si crystal, orientation 111 * Desc: Image of dislocations in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of dislocations. * Autho |
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