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English: Self-aligned quadruple patterning flow to produce four narrow lines between two wide lines (top view).[1][2][3] The yellow and blue lines are etched separately by selective etch chemistries.
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Author Guiding light

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References

  1. F. Lazzarino et al., Proc. SPIE 10149, 1014908 (2017).
  2. B. Vincent et al., Proc. SPIE 10583, 105830W (2018).
  3. Etch Pitch Doubling Requirement for Cut-Friendly Track Metal Layouts: Escaping Lithography Wavelength Dependence

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25 March 2022

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Date/TimeThumbnailDimensionsUserComment
current09:47, 26 March 2022Thumbnail for version as of 09:47, 26 March 20221,166 × 1,089 (24 KB)Guiding lightUploaded own work with UploadWizard

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